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PDF 2SB1640 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1640 | |
| Descripción | TOSHIBA Transistor Silicon PNP Triple Diffused Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
2SB1640
Unit: mm
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −2 A, IB = −0.2 A)
• Collector metal (fin) is covered with mold region.
• Complementary to 2SD2525
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
−60
−60
−7
−3
−6
−0.5
1.8
150
−55 to 150
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = −60 V, IE = 0
VEB = −7 V, IC = 0
IC = −50 mA, IB = 0
VCE = −5 V, IC = −0.5 A
VCE = −5 V, IC = −2 A
IC = −2 A, IB = −0.2 A
VCE = −5 V, IC = −0.5 A
VCE = −5 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −10 µA
― ― −10 µA
−60 ―
―
V
100 ― 320
15 ― ―
― −0.1 −1.5
V
― −0.75 −1.0
V
― 9 ― MHz
― 50 ― pF
Marking
B1640
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB1640.PDF ] | |
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