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PDF MT29F1G08AACWP Data sheet ( Hoja de datos )
| Número de pieza | MT29F1G08AACWP | |
| Descripción | NAND Flash Memory | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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Micron Confidential and Proprietary
1Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F1G08AACWP, MT29F1G08AACH4
MT29F1G08ABCHC, MT29F1G16ABCHC,
MT29F1G08ABCH4, MT29F1G16ABCH4
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
• Asynchronous I/O performance
– tRC/tWC: 25ns (3.3V), 35ns (1.8V)
• Array performance
– Read page: 25µs
– Program page: 250µs (TYP, 3.3V)
– Program page: 250µs (TYP, 1.8V)
– Erase block: 500µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Block lock (1.8V only)
– Boot block (1.8V only)
– Programmable drive strength
– Read unique ID
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Internal data move operations supported within the
device from which data is read
• Ready/busy# (R/B#) signal provides a hardware
method for detecting operation completion
• WP# signal: write protect entire device
• Blocks 0–7 (block address 00h-07h) guaranteed to
be valid with ECC when shipped from factory (3.3V
only); see Error Management (page 83).
• Blocks 0–3 (block address 00h-03h) guaranteed to
be valid with ECC when shipped from factory (1.8V
only); see Error Management (page 83).
• RESET (FFh) required as first command after power-
on
• Alternate method of device initialization (Nand_In-
it) after power up3 (contact factory)
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCC: 1.65–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Extended (ET): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes:
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. Available only in 1.8V VFBGA package.
PDF:09005aef83c2e425
1gb_nand_m58a.pdf – Rev. D 1/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Micron Confidential and Proprietary
1Gb: x8, x16 NAND Flash Memory
List of Tables
Table 1: Asynchronous Signal Definitions ........................................................................................................ 8
Table 2: Array Addressing (x8) ........................................................................................................................ 16
Table 3: Array Addressing (x16) ...................................................................................................................... 17
Table 4: Asynchronous Interface Mode Selection ........................................................................................... 18
Table 5: Command Set .................................................................................................................................. 29
Table 6: READ ID Parameters for Address 00h ................................................................................................ 33
Table 7: READ ID Parameters for Address 20h ................................................................................................ 34
Table 8: Parameter Page Data Structure ......................................................................................................... 36
Table 9: Feature Address Definitions .............................................................................................................. 39
Table 10: Feature Addresses 01h: Timing Mode .............................................................................................. 41
Table 11: Feature Addresses 80h: Programmable I/O Drive Strength ............................................................... 42
Table 12: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ..................................................... 42
Table 13: Features Address 90h: Operation Mode ........................................................................................... 43
Table 14: Status Register Definition ............................................................................................................... 44
Table 15: Block Lock Address Cycle Assignments ............................................................................................ 65
Table 16: Block Lock Status Register Bit Definitions ........................................................................................ 68
Table 17: Error Management Details .............................................................................................................. 83
Table 18: Absolute Maximum Ratings ............................................................................................................ 84
Table 19: Recommended Operating Conditions ............................................................................................. 84
Table 20: Valid Blocks .................................................................................................................................... 84
Table 21: Capacitance ................................................................................................................................... 85
Table 22: Test Conditions .............................................................................................................................. 85
Table 23: AC Characteristics: Command, Data, and Address Input (3.3V) ......................................................... 86
Table 24: AC Characteristics: Command, Data, and Address Input (1.8V) ......................................................... 86
Table 25: AC Characteristics: Normal Operation (3.3V) ................................................................................... 87
Table 26: AC Characteristics: Normal Operation (1.8V) ................................................................................... 88
Table 27: DC Characteristics and Operating Conditions (3.3V) ........................................................................ 89
Table 28: DC Characteristics and Operating Conditions (1.8V) ........................................................................ 90
Table 29: PROGRAM/ERASE Characteristics .................................................................................................. 91
PDF:09005aef83c2e425
1gb_nand_m58a.pdf – Rev. D 1/10 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
Micron Confidential and Proprietary
1Gb: x8, x16 NAND Flash Memory
Signal Descriptions and Assignments
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View)
1 2 3 4 5 6 7 8 9 10
A NC NC
NC NC
B NC
NC NC
C WP# ALE Vss CE# WE# R/B#
D VCC RE# CLE NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC VSS NC
G
DNU
VCC LOCK I/O13 I/O15
NC
H I/O8 I/O0 I/O10 I/O12 I/O14 VCC
J I/O9 I/O1 I/O11 VCC I/O5 I/O7
K VSS I/O2 I/O3 I/O4 I/O6 VSS
L NC NC
NC NC
M NC NC
NC NC
PDF:09005aef83c2e425
1gb_nand_m58a.pdf – Rev. D 1/10 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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