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PDF 2SD662B Data sheet ( Hoja de datos )
| Número de pieza | 2SD662B | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SD0662 VCBO
2SD0662B
250
400
Collector-emitter voltage 2SD0662 VCEO
(Base open)
2SD0662B
200
400
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
PC
Tj
Tstg
5
70
600
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
321
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SD0662 VCEO
2SD0662B
IC = 100 µA, IB = 0
200
400
V
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICEO
hFE *
VCE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCE = 100 V, IB = 0
VCE = 10 V, IC = 5 mA
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
30
50
V
2 µA
220
1.2 V
MHz
10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150
100 to 220
Publication date: November 2002
Note) The part numbers in the parenthesis show conventional part number.
SJC00195BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD662B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD662 | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) | Panasonic Semiconductor |
| 2SD662 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
| 2SD662B | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) | Panasonic Semiconductor |
| 2SD662B | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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