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PDF IXGK50N90B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGK50N90B2D1 | |
| Descripción | HiPerFAST IGBT | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM
IGBT with Fast
Diode
IXGH 50N90B2D1
IXGK 50N90B2D1
IXGX 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
Preliminary Data Sheet
V
I CES
VC25
t CE(sat)
fi typ
= 900 V
= 75 A
= 2.7 V
= 200 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
FC
Weight
Mounting torque (TO-247, TO-264)
Mounting force (PLUS247)
Maximum Ratings
900 V
900 V
± 20
± 30
V
V
75 A
50 A
200 A
ICM = 100
A
400
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
20..120 / 4.5..25 N/lb
TO-247
TO-264
PLUS247
6
10
6
g
g
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VGE(th)
IC = 250 μA, VCE = VGE
ICES
IGES
VCE(sat)
VCE = VCES
VGE = 0 V
TJ = 150°C
VCE = 0 V, VGE = ± 20 V
IC = IC110, VGE = 15 V, Note 1
TJ = 125°C
Characteristic Values
min. typ. max.
3.0 5.0 V
50 μA
1 mA
± 100 nA
2.2 2.7 V
V
TO-247 (IXGH)
G
CE
PLUS247 (IXGX)
G
CE
TO-264 (IXGK)
C (TAB)
C (TAB)
G
D
S
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
© 2006 IXYS All rights reserved
DS99393(01/06)
1 page  
www.DataSheet4U.net
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
600
550 td(off)
tfi - - - - - -
500 RG = 5 Ω
450 VGE = 15V
IC = 25A
50A
100A
400 VCE = 720V
350
300
250 IC = 100A
200 50A
25A
150
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Gate Charge
15
13.5
12
10.5
9
7.5
6
4.5
3
VCE = 450V
I C = 50A
I G= 10mA
1.5
0
0 20 40 60 80 100 120 140
Q G - nanoCoulombs
10000
Fig. 15. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
10
0
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 16. Reverse-Bias Safe
Operating Area
110
100
90
80
70
60
50
40
30 TJ = 125ºC
20 RG =10Ω
dV/dT < 10V/ns
10
0
100 200 300 400 500 600 700 800 900
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
1
0.1
0.01
0.1
© 2006 IXYS All rights reserved
1
10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGK50N90B2D1.PDF ] | |
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