(PDF) SUU50N03-10P Datasheet - N-Channel MOSFET

Número de pieza	SUU50N03-10P
Descripción	N-Channel MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! www.DataSheet4U.net SUU50N03-10P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.010 @ VGS = 10 V 30 0.014 @ VGS = 4.5 V TO-251 ID (A)a 20 18 D and DRAIN-TAB G GDS Top View Order Number: SUU50N03-10P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 30 20 20 14 100 20 71b 8.3a --55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface mounted on 1” x 1” FR4 Board, t ≤ 10 sec. b. See SOA curve for voltage derating. t ≤ 10 sec Steady State Steady State Document Number: 71296 S-01706—Rev. A, 14-Aug-00 Symbol RthJA RthJC Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W www.vishay.com 1 1 page

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PDF SUU50N03-10P Data sheet ( Hoja de datos )