(PDF) KDS221E Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDS221E
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (1 s) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 0.7 RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW KDS221E SILICON EPITAXIAL PLANAR DIODE E B DIM MILLIMETERS A 1.60 +_ 0.10 2 D B 0.85+_ 0.10 13 C 0.70 +_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00 +_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 3 21 ESM Marking DS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR TEST CONDITION IF=10mA VR=15V MIN. - - TYP. - - MAX. 1.0 0.1 UNIT V A 2w00w3w. 1.D0a. t2a2Sheet4U.net Revision No : 0 1/2 1 page

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PDF KDS221E Data sheet ( Hoja de datos )