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PDF NTMD5836NL Data sheet ( Hoja de datos )
| Número de pieza | NTMD5836NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
• Asymmetrical N Channels
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Max
ID Max
(Notes 1 and 2)
Channel 1
40 V
12 mW @ 10 V
11 A
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
6.5 A
30.8 mW @ 4.5 V
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
http://onsemi.com
N−Channel 1
D1
N−Channel 2
D2
G1 G2
S1 S2
8
1
SOIC−8
CASE 751
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
5836NL
AYWW G
G
1
S1 G1 S2 G2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMD5836NLR2G SOIC−8
(Pb−Free)
Shipping†
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
March, 2011 − Rev. 0
1
Publication Order Number:
NTMD5836NL/D
1 page  
NTMD5836NL
TYPICAL PERFORMANCE CURVES
70
10V
60
50
40
30
5.5 V
6.5 V
8.5 V
4.5 V
3.9 V
TJ = 25°C
3.5 V
70
VDS ≥ 20 V
60
50
40
30 TJ = 125°C
20
3.1 V
10
0 VGS = 2.5 V
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics −
Channel 1
20 TJ = 25°C
10 TJ = −55°C
0
2345
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics − Channel 1
0.035
0.03
0.025
TJ = 25°C
ID = 10 A
0.02
TJ = 25°C
0.015
VGS = 4.5 V
0.02
0.015
0.01
VGS = 10 V
0.01
2 3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage − Channel 1
0.005
2 6 10 14 18
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage − Channel 1
1.6
ID = 10 A
VGS = 4.5 V
1.4
1.2
1
100000
VGS = 0 V
10000
TJ = 150°C
TJ = 125°C
0.8 1000
−50 −25 0
25 50 75 100 125 150
10
20
30
40
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature − Channel 1
Figure 6. Drain−to−Source Leakage Current
vs. Voltage − Channel 1
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NTMD5836NL.PDF ] | |
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