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PDF STF8A80 Data sheet ( Hoja de datos )

Número de pieza STF8A80
Descripción Bi-Directional Triode Thyristor
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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No Preview Available ! STF8A80 Hoja de datos, Descripción, Manual

Bi-Directional Triode Thyristor
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Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
STF8A80
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220F
1
2
3
Absolute Maximum Ratings
( TJ = 25°C unless otherwise specified )
Symbol
VDRM
IT(RMS)
ITSM
I2 t
PGM
PG(AV)
IGM
VGM
VISO
TJ
TSTG
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2 t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Condition
TC = 89 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
A.C. 1 minute
Ratings
800
8.0
80/88
32
5.0
0.5
2.0
10
1500
- 40 ~ 125
- 40 ~ 150
2.0
Units
V
A
A
A2 s
W
W
A
V
V
°C
°C
g
Aug, 2008. Rev. A
copyright@Winsemi Semiconductor Co., Ltd., All rights reserved.
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STF8A80 pdf
STF8A80
TO-220F Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
φ
φ1
φ2
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
2.51
1.25
0.45
0.6
mm
Typ.
2.54
5.08
3.7
3.2
1.5
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
2.62
1.55
0.63
1.0
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
0.099
0.049
0.018
0.024
Inch
Typ.
0.100
0.200
0.146
0.126
0.059
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
0.103
0.061
0.025
0.039
F
B
A
E
HI
φ
C
G
D
L
1
2
3
J
K
N
φ1
φ2
M
O
1. T1
2. T2
3. Gate
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