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Número de pieza | APTGT400U120D4G | |
Descripción | IGBT Power Module | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT400U120D4G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT400U120D4G
Single switch
Trench + Field Stop IGBT
Power Module
www.DataSheet4U.net
1
3
5
2
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
650
400
800
±20
1785
800A@1050V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT400U120D4G
Operating Frequency vs Collector Current
50
VCE=600V
40
D=50%
RG=1.8 Ω
TJ=125°C
30
ZVS
Tc=75°C
ZCS
20
10 Hard
switching
0
0 100 200 300 400 500
IC (A)
Forward Characteristic of diode
800
TJ=25°C
600
400
200
0
0
TJ=125°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
0.15
0.125
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.1 0.7
0.075 0.5
0.05 0.3
0.025 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT400U120D4G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT400U120D4 | IGBT Power Module | Advanced Power Technology |
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