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PDF PTFA192401F Data sheet ( Hoja de datos )
| Número de pieza | PTFA192401F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA192401E
Package H-36260-2
PTFA192401F
Package H-37260-2
PTFA192401E
PTFA192401F
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
-25 35
-30
Efficiency
30
-35
-40 ACPR Low
-45
25
20
-50
-55
-60
-65 ACPR Up
15
10
5
-70
34
36 38 40 42 44 46 48
Average Output Power (dBm)
0
50
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at
1960 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –41 dBc
• Typical single-carrier WCDMA performance at
1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel power = –33 dBc
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 240 W
(CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02, 2009-04-01
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
1 52 dBm
0.1 51.0 dBm
0.01 50 dBm
48 dBm
46 dBm
Input
0.001
1
23 4 5 67
Peak-to-Average (dB)
8
PTFA192401E
PTFA192401F
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz
18
17 -15C
25C
16
15 85C
14
13
12
1
10 100
Output Power (W)
1000
Two-tone Drive-up
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-25 45
-30 40
-35
-40
-45
-50 IM5
-55
IM3
35
Efficiency
30
25
20
-60 IM7 15
-65
42
44 46 48 50 52 54
Output Power, PEP (dBm)
10
56
Voltage Sweep
IDQ = 1600 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10 50
-20
IM3 Up
-30
Efficiency 40
30
-40
-50
23
20
Gain
10
25 27 29 31 33
Supply Voltage (V)
Data Sheet
5 of 11
Rev. 02, 2009-04-01
5 Page 
PTFA192401E/F
Confidential, Limited Internal Distribution
Revision History:
2009-04-01
Previous Version:
2008-10-06
Page
Subjects (major changes since last revision)
9, 10
Update package information
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-04-01
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 02, 2009-04-01
11 Page | ||
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