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PDF PTFA192001F Data sheet ( Hoja de datos )
| Número de pieza | PTFA192001F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA192001E
Package H-36260-2
PTFA192001F
Package H-37260-2
PTFA192001E
PTFA192001F
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 30
Efficiency
-30 25
IM3
-35 20
-40 15
-45 10
-50 ACPR 5
-55
34
36 38 40 42 44 46
Output Power, avg. (dBm)
0
48
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1990
MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.9 dB
- Efficiency = 27%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical single-carrier WCDMA performance at 1960
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 48.5 dBm
- Linear Gain = 15.9 dB
- Efficiency = 34%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –40 dBc
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05, 2008-05-15
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
VDD = 30 V, IDQ = 1500 m A, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
48 dBm
1
0.1 52 dBm
50.5 dBm
0.01
46 dBm
Input
50 dBm
0.001
1 234 5678
Peak-to-Average (dB)
PTFA192001E
PTFA192001F
Power Gain vs. Power Sweep (CW) over
Temperature
VDD = 30 V, IDQ = 1500 m A, ƒ = 1990 MHz
18
-15C
17
25C
16
15 85C
14
13
12
1
10 100
Output Power (W)
1000
Voltage Sweep
IDQ = 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10 50
-20 40
Efficiency
-30 IM3 Up
30
-40
-50
23
20
Gain
10
25 27 29 31 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 05, 2008-05-15
5 Page 
PTFA192001E/F
Confidential, Limited Internal Distribution
Revision History:
2008-05-15
Previous Version:
2007-12-06, Data Sheet
Page
Subjects (major changes since last revision)
1, 3, 9, 10
Update to product V4. Update package outline diagrams.
1, 2 Update specifications.
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-05-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2006 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 05, 2008-05-15
11 Page | ||
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