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PDF PTFA191001F Data sheet ( Hoja de datos )
| Número de pieza | PTFA191001F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for single-
and two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
PTFA191001F
Package H-37248-2
PTFA191001E
PTFA191001F
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Efficiency
-28 30
-33
IM3
-38
25
20
-43 15
-48
-53
34
ACPR
36 38 40 42 44
Average Output Power (dBm)
10
5
46
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
• Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-10-31
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
IS-95 Two-carrier NCDMA Drive-up
VDD = 30 V, IDQ = 900 mA,
ƒ1 = 1962.5 MHz, ƒ2 = 1960 MHz
-20
35
-25 30
Efficiency
-30 25
-35 20
-40 15
-45
-50 IMD Low
10
5
-55
36.0
38.0 40.0 42.0
Average Output Power (dBm)
0
44.0
PTFA191001E
PTFA191001F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.2 A
0.6 A
1.0 A
1.5 A
3.0 A
4.5 A
6.0 A
7.5 A
9.0 A
0 20 40 60 80
Case Temperature (°C)
100
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1900
1930
1960
1990
2020
Z Source Ω
R jX
5.41
–4.79
5.23
–4.54
5.05
–4.32
4.92
–4.06
4.79
–3.81
Z Load Ω
R jX
2.88
2.91
2.81
3.18
2.77
3.39
2.80
3.63
2.73
3.89
Z0 = 50 Ω
Z Load
2020 MHz
1900 MHz
Z Source
2020 MHz
0 .1
1900 MHz
Data Sheet
5 of 11
Rev. 04, 2007-10-31
5 Page 
PTFA191001E/F
Confidential, Limited Internal Distribution
Revision History:
2007-10-31
Previous Version:
Rev. 02, 2005-08-11, Data Sheet; Rev. 03, 2007-06-25
Page
Subjects (major changes since last revision)
1, 10
Update company information.
1, 3, 9, 10
Update to product V4, with new package technologies. Update package outline diagrams.
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-10-31
Published by
InfineonTechnologies AG
81726 München, Germany
© InfineonTechnologies AG 2004.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 04, 2007-10-31
11 Page | ||
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