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PDF PTFA190451F Data sheet ( Hoja de datos )
| Número de pieza | PTFA190451F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PTFA190451F (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA190451E and PTFA190451F are thermally-enhanced,
45-watt, internally matched LDMOS FETs designed for WCDMA,
TD-SCDMA and other cellular standards in the 1930 to 1990 MHz
frequency band. These devices are available in thermally-enhanced
packages with eared or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA190451E
Package H-36265-2
PTFA190451F
Package H-37265-2
PTFA190451E
PTFA190451F
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-25 35
Efficiency
-30 30
-35 IM3 25
-40 20
-45 15
ACPR
-50 10
-55
30
32 34 36 38 40
Average Output Power (dBm)
5
42
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
• Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 11 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Gps
16.5 17.5
—
Drain Efficiency
ηD
27 28
—
Intermodulation Distortion
IMD — –39 –37
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2009-02-20
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
| 2.09 A
2.78 A
3.48 A
4.17 A
0 20 40 60 80
Case Temperature (°C)
100
PTFA190451E
PTFA190451F
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1900
1930
1960
1990
2020
Z Source Ω
R jX
15.51
–0.094
16.30
–0.444
17.19
–0.881
18.02
–1.437
18.79
–2.315
Data Sheet
2020 MHz
1900 MHz
Z Load
0.1
Z Source
1900 MHz
2020 MHz
5 of 10
Z Load Ω
R jX
5.73
–1.71
5.68
–1.52
5.69
–1.31
5.63
–1.08
5.61
–0.91
Z0 = 50 Ω
Rev. 03.1, 2009-02-20
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA190451F.PDF ] | |
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