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PDF PTFA182001E Data sheet ( Hoja de datos )
| Número de pieza | PTFA182001E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
200 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE
applications from 1805 to 1880 MHz. Features include input and output
matching, and thermally-enhanced single-ended package with a
slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA182001E
Package H-30260-2
2-Tone Drive-up
VDD = 30 V, IDQ = 1600 m A,
ƒ = 1840 MHz, tone spacing = 1 MHz
-25 45
-30 Efficiency
-35
-40 IM3
40
35
30
-45 IM5 25
-50 20
-55 15
IM7
-60 10
-65 5
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Features
• Pb-free, RoHS-compliant and thermally-enhanced
package
• Broadband internal matching
• Typical EDGE performance at 1836.6 MHz, 30 V
- Average output power = 50 dBm
- Linear gain = 16.3 dB
- Efficiency = 37%
- EVM = 3.1%
- 400 kHz modulation = –61 dBc
- 600 kHz modulation = –76 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 49%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
RF Characteristics
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min Typ
15.7 16.6
37 38
— –31.5
Max
—
—
–30
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01, 2008-03-12
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep (CW) over Temperature
VDD = 30 V, IDQ = 1600 mA, ƒ = 1880 MHz
18
17
16
15
14
13
12
1
-15°C
25°C
85°C
10 100
Output Power (W)
1000
PTFA182001E
Voltage Sweep
IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10 50
-20
IM3 Up
-30
Efficiency 40
30
-40
-50
23
20
Gain
10
25 27 29 31 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 10
Rev. 01, 2008-03-12
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA182001E.PDF ] | |
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