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PDF PTFA180701F Data sheet ( Hoja de datos )
| Número de pieza | PTFA180701F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon Technologies | |
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PTFA180701E
PTFA180701F
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermally-
enhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz
5 50
4
Efficiency
40
3 30
2 20
1 10
EVM
00
30 32 34 36 38 40 42 44 46
Output Power, avg. (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
• Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, ƒ = 1836.6 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum
Gain
Drain Efficiency
@ 400 kHz
@ 600 kHz
Symbol Min Typ
EVM RMS
—
2.0
ACPR
— –62
ACPR
— –76
Gps — 16.5
ηD — 40.5
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2009-02-20
1 page  
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 550 mA, ƒ = 1880 MHz
20 64
19
18
17 Gain
16
15
14
13
Efficiency
58
52
46
40
34
28
22
16
12
0
10
10 20 30 40 50 60 70 80
Output Power (W)
PTFA180701E
PTFA180701F
Output Power (P–1dB) vs. Drain Voltage
IDQ = 550 mA, ƒ = 1880 MHz
50
49
48
47
46
24
26 28 30
Drain Voltage (V)
32
IS-95 CDMA Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1840 MHz
TCASE = 25°C
45 TCASE = 90°C
40
Efficiency
-30
-35
35
30 ACP ƒC – 0.75 MHz
-40
-45
25 -50
20 -55
15 -60
10 ACPR ƒC + 1.98 MHz -65
5 -70
0 -75
30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0 20 40 60 80
Case Temperature (°C)
100
Data Sheet
5 of 11
Rev. 03.1, 2009-02-20
5 Page 
PTF180701E/F
Confidential, Limited Internal Distribution
Revision History:
2009-02-20
Previous Version:
2006-08-10, Data Sheet
Page
Subjects (major changes since last revision)
1, 3, 9, 10
Update to product V4, with new package technologies. Update package outline diagrams.
8 Fixed typing error
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03.1, 2009-02-20
11 Page | ||
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| PDF Descargar | [ Datasheet PTFA180701F.PDF ] | |
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