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Número de pieza | PTFA142401EL | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTFA142401EL (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Thermally-Enhanced High Power RF LDMOS FET
240 W, 1450 – 1500 MHz
www.DataSheet4U.net
Description
The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs
designed for DVB and DAB applications in the 1450 to 1500 MHz
frequency band. Features include internal I/O matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA142401EL
Package H-33288-2
PTFA142401FL
Package H-34288-2
PTFA142401EL
PTFA142401FL
DVB-T Drive-up
VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz,
DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW
ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW
-25 40
Efficiency
-30 30
-35
ACPR Hi
-40
ACPR Low
20
10
-45
42
43 44 45 46 47 48
Average Output Power (dBm)
0
49
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages with less than 0.25 micron Au plating
• Broadband internal matching
• Typical DVB-T performance at 1475 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16.0 dB
- Efficiency = 27.5%
- Adjacent channel power = –32 dBc
• Typical CW performance, 1475 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
200 W (CW) output power
RF Characteristics
DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average
ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW)
Symbol Min Typ
Gps — 16.5
ηD — 27.5
ACPR
— –32
Max
—
—
—
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2009-07-16
1 page Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1450
1463
1475
1488
1500
Z Source Ω
R jX
2.3 –6.4
2.3 –6.2
2.2 –6.0
2.2 –5.8
2.1 –5.7
Z Load Ω
R jX
1.2 –1.4
1.2 –1.3
1.2 –1.2
1.2 –1.2
1.2 –1.1
See next page for circuit information
PTFA142401EL
PTFA142401FL
Z0 = 50 Ω
Z Load
1500 MHz
1450 MHz
Z Source
0.1 1500 MHz
1450 MHz
0.2
Data Sheet
5 of 10
Rev. 04, 2009-07-16
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PTFA142401EL.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFA142401EL | Thermally-Enhanced High Power RF LDMOS FET | Infineon Technologies |
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