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Número de pieza TLE7239GS
Descripción 8 Channel High-Side and Low-Side Relay Switch
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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Data Sheet, Rev. 1.0, October 2008
SPIDER - TLE7239GS
8 Channel High-Side and Low-Side Relay Switch
with Limp Home Mode and Cranking
Automotive Power

1 page




TLE7239GS pdf
TLE7239GS
Overview
Detailed Description
The TLE7239GS is an eight channel high-side and low-side relay switch providing embedded protective functions.
The output stages incorporate two low-side switches (0.9 per channel), four high-side switches (two channels
with 0.9 and two channels with 1.6 ) and two auto-configuring high-side or low-side switches (0.9 per
channel). The auto-configuring switches can be utilized in high-side or low-side configuration just by connecting
the load accordingly. They are also suitable to switch a 5 V supply line in high-side configuration. Protective and
diagnostic functions adjust automatically to the chosen configuration.
The 8 bit serial peripheral interface (SPI) is utilized for control and diagnosis of the device and the loads. The SPI
interface provides daisy chain capability in order to assemble multiple devices in one SPI chain by using the same
number of micro-controller pins.
The outstanding feature of this octal relay switch enables the output channels to keep their state at low battery
voltage. This is realized by an integrated power supply, especially designed to fulfill cranking mode requirements
(Vbb = 4 V) independent from digital power supply (VDD). The SPI functionality is given only when the digital power
supply is available.
Furthermore, the TLE7239GS is equipped with two input pins that can be individually routed to the output control
of each channel thus offering complete flexibility in design and PCB-layout. The input multiplexer is controlled via
SPI.
In limp home mode (fail-safe mode), the input pins are directly routed to the configurable output channels 4 and
5. The limp home mode operates independently of digital power supply and is activated via pin LHI.
The device provides full diagnosis of the load via open load, over load and short circuit detection. SPI diagnosis
flags indicate latched fault conditions that may have occurred.
Each output stage is protected against short circuit. In case of over load, the affected channel switches off. There
are temperature sensors available for each channel to protect the device against over temperature.
The device protects itself with a build in reverse polarity protection which prohibits intrinsic current flow through
the logic during reverse polarity. However the output stages still incorporate a reverse diode where current can
flow through during reverse polarity.
The power transistors are built by N-channel power MOSFETs. The inputs are ground referenced CMOS
compatible. The device is monolithically integrated in Smart Power Technology.
Data Sheet
5 Rev. 1.0, 2008-10-30

5 Page





TLE7239GS arduino
TLE7239GS
Electrical Characteristics
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Absolute Maximum Ratings1)
Pos. Parameter
Symbol Limit Values Unit Test Conditions
min. max.
4.1.11 Maximum energy dissipation one channel EAR
repetitive pulses for ch. 2,3
mJ 2)
1 · 104 cycles
1 · 106 cycles
Logic Pins
– 12
– 11
Tj(0) = 105 °C
ID(0) = 0.180 A
Tj(0) = 105 °C
ID(0) = 0.180 A
4.1.12 Voltage at input pins
4.1.13 Voltage at LHI pin
4.1.14 Voltage at chip select pin
4.1.15 Voltage at serial clock pin
4.1.16 Voltage at serial input pin
4.1.17 Voltage at serial output pin
Temperatures
VIN -0.3 VDD + 0.3 V
VLHI -0.3 5.5
V
VCS -0.3 VDD + 0.3 V
VSCLK -0.3 VDD + 0.3 V
VSI -0.3 VDD + 0.3 V
VSO -0.3 VDD + 0.3 V
3)
3)
3)
3)
3)
4.1.18 Junction Temperature
4.1.19 Storage Temperature
ESD Susceptibility
Tj
-40 150
°C –
Tstg -55 150 °C –
4.1.20 ESD susceptibility on all pins
VESD
-2
2
1) not subject to production test
2) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse
3) VDD + 0.3 V < 5.5 V
4) ESD susceptibility, HBM according to EIA/JESD 22-A114
kV HBM4)
4.2 Functional Range
Pos.
4.2.1
4.2.2
4.2.3
Parameter
Supply Voltage Range for
Nominal Operation
upper Supply Voltage Range for
Extended Operation
lower Supply Voltage Range for
Extended Operation
Symbol
Vbb(nom)
Limit Values
Min.
Max.
9 16
Vbb(ext),up 16
28
Vbb(ext),low 4
9
Unit Conditions
V–
V Parameter
Deviations possible
V Parameter
Deviations possible
4.2.4 Junction Temperature
Tj -40
150 °C –
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
Data Sheet
11 Rev. 1.0, 2008-10-30

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