DataSheet.es    


PDF SSTDPAD100 Data sheet ( Hoja de datos )

Número de pieza SSTDPAD100
Descripción Dual Low Leakage
Fabricantes Micross 
Logotipo Micross Logotipo



Hay una vista previa y un enlace de descarga de SSTDPAD100 (archivo pdf) en la parte inferior de esta página.


Total 1 Páginas

No Preview Available ! SSTDPAD100 Hoja de datos, Descripción, Manual

SSTDPAD100
LOW LEAKAGE
PICO-AMP DUAL DIODE
Linear Systems replaces discontinued Siliconix SSTDPAD100
The SSTDPAD100 is a low leakage Monolithic Dual Pico-Amp Diode
The SSTDPAD100 low-leakage monolithic dual diode
provides a superior alternative to conventional diode
technology when reverse current (leakage) must be
minimized. In addition the monolithic dual construction
allows excellent capacitance matching per diode. The
SSTDPAD100 features a leakage current of -100 pA
and is well suited for use in applications such as input
protection for operational amplifiers.
SSTDPAD100 Benefits:
ƒ Negligible Circuit Leakage Contribution
ƒ Circuit “Transparent” Except to Shunt
High-Frequency Spikes
ƒ Simplicity of Operation
SSTDPAD100 Applications:
ƒ Op Amp Input Protection
ƒ Multiplexer Overvoltage Protection
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX SSTDPAD100 
HIGH ON ISOLATION 
EXCELLENT CAPACITANCE MATCHING 
ULTRALOW LEAKAGE 
REVERSE BREAKDOWN VOLTAGE 
REVERSE CAPACITANCE 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Forward Current (Note 1) 
 
20fA 
CR ≤ 0.5pF 
≤ 100 pA 
BVR ≥ ‐30V 
Crss ≤ 4.0pF 
65°C to +150°C 
55°C to +135°C 
500mW 
50mA 
 
SSTDPAD100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN.  TYP.  MAX. 
Click To BuyBVR 
Reverse Breakdown Voltage  ‐30  ‐‐ 
‐‐ 
UNITS 
V 
CONDITIONS 
IR = ‐1µA 
VF 
Forward Voltage 
‐‐  0.8  1.5 
V 
IF = 1mA 
CrSS 
Total Reverse Capacitance 
‐‐  ‐‐  4.0 
pF 
VR = ‐5V, f = 1MHz 
|CR1CR2| 
Differential Capacitance (CR) 
‐‐ 
‐‐ 
0.5 
pF 
VR1 =  VR2 = ‐5V, f = 1MHz 
IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  ‐100 
pA 
VR = ‐ 20V 
Notes:
1. Absolute maximum ratings are limiting values above which SSTDPAD100 serviceability may be impaired.
Available Packages:
SSTDPAD100 in SOIC
SSTDPAD100 available as bare die
Please contact Micross for full package and die dimensions
SOIC (Top View)
Micross Components Europe
Tel: +44 1603 788967
Web: http://www.micross.com/distribution.com
www.DataSheet4U.com
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx

1 page





PáginasTotal 1 Páginas
PDF Descargar[ Datasheet SSTDPAD100.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SSTDPAD10Dual Pico Amp DiodesCalogic
Calogic
SSTDPAD10Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
SSTDPAD100Dual Pico Amp DiodesCalogic
Calogic
SSTDPAD100Dual Low LeakageMicross
Micross

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar