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PDF IXFH230N10T Data sheet ( Hoja de datos )
| Número de pieza | IXFH230N10T | |
| Descripción | Trench HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
Trench HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH230N10T
VDSS =
ID25 =
RDS(on) ≤
100V
230A
4.7mΩ
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25 Notes 1, 2
Maximum Ratings
100
100
V
V
± 20 V
± 30 V
230 A
160 A
500 A
115 A
1.5 J
650 W
-55 ... +175
175
-55 ... +175
300
260
6
°C
°C
°C
°C
°C
g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
50 μA
3 mA
4.7 mΩ
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
w©w20w09.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS100104(01/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
48
47 RG = 1Ω
46 VGS = 10V
VDS = 50V
45
44 I D = 200A
43
42
41
40 I D = 100A
39
38
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
500
450
400
350
300
250
200
150
100
50
0
1
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
100
90
80
70
I D = 200A, 100A
60
50
40
30
20
10
0
2 3 4 5 6 7 8 9 10
RG - Ohms
24
23
22
21
20
19
18
17
16
15
14
13
12
40
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
62
TJ = 125ºC
t f td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 50V
60
58
56
54
52
50
48
46
TJ = 25ºC
44
42
40
38
60 80 100 120 140 160 180 200
ID - Amperes
IXFH230N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55 RG = 1Ω
VGS = 10V
50 VDS = 50V
45
TJ = 125ºC
40 TJ = 25ºC
35
30
25
20
40 60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28
26 t f
td(off) - - - -
RG = 1Ω, VGS = 10V
24 VDS = 50V
56
54
52
22
20 I D = 100A
50
48
18 46
16 44
I D = 200A
14 42
12 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
400
360 t f
td(off) - - - -
320 TJ = 125ºC, VGS = 10V
VDS = 50V
280
I D = 200A
240
200
160
120 I D = 100A
80
40
0
123456789
RG - Ohms
220
200
180
160
140
120
100
80
60
40
20
10
© 2009 IXYS CORPORATION, All rights reserved
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFH230N10T.PDF ] | |
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