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PDF IXGP42N30C3 Data sheet ( Hoja de datos )
| Número de pieza | IXGP42N30C3 | |
| Descripción | GenX3 300V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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GenX3TM 300V IGBT
High Speed PT IGBTs for
50-150kHz switching
IXGA42N30C3
IXGH42N30C3
IXGP42N30C3
Symbol
VCES
VCGR
VGES
VGEM
IC110
ICM
IA
EAS
SSOA
(RBSOA)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C (chip capability)
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 10Ω
Clamped inductive load @ ≤ 300V
PC
TJ
TJM
Tstg
TL
TSOLD
TC = 25°C
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Md Mounting torque (TO-247)(TO-220)
Weight
TO-263
TO-247
TO-220www.DataSheet4U.net
Maximum Ratings
300
300
±20
±30
42
250
V
V
V
V
A
A
42
250
ICM = 84
A
mJ
A
223
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
6.0
3.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 42A, VGE = 15V, Note1
TJ = 125°C
Characteristic Values
Min. Typ.
Max.
300 V
2.5 5.0 V
25 μA
500 μA
±100 nA
1.54 1.85 V
1.54 V
© 2008 IXYS CORPORATION, All rights reserved
VCES =
I =C110
V ≤CE(sat)
tfi typ =
300V
42A
1.85V
65ns
TO-263 (IXGA)
G
E
TO-247 (IXGH)
C (TAB)
G
CE
TO-220 (IXGP)
C (TAB)
GCE
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
z Optimized for low switching losses
z Square RBSOA
z High current handling capability
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
DS99885B(07/08)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
3.4
3.0 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
2.6 VCE = 200V
2.2
I C = 84A
3.2
2.8
2.4
2.0
1.8 1.6
1.4 1.2
1.0 0.8
0.6
I C = 42A
0.4
0.2 0.0
10 15 20 25 30 35 40 45 50 55 60 65 70 75
RG - Ohms
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
35
www.DataSheet4U.net
1.3
I C = 84A
1.2
1.1
Eoff Eon - - - -
RG = 10Ω , VGE = 15V
VCE = 200V
1.0
0.9
0.8
0.7
0.6
I C = 42A
0.5
0.4
0.3
45 55 65 75 85 95
TJ - Degrees Centigrade
0.2
105 115 125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
170
160
150
140
130
120
110
100
90
80
70
60
50
20
t f td(off) - - - -
RG = 10Ω , VGE = 15V
VCE = 200V
TJ = 125ºC
TJ = 25ºC
30 40 50 60 70
IC - Amperes
80
140
135
130
125
120
115
110
© 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
2.0
1.8 Eoff
Eon - - - -
1.6 RG = 10Ω , VGE = 15V
VCE = 200V
1.4
2.0
1.8
1.6
1.4
1.2
TJ = 125ºC
1.0
1.2
1.0
0.8 0.8
0.6 0.6
0.4
TJ = 25ºC
0.4
0.2 0.2
0.0 0.0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
200 600
190 t f
td(off) - - - -
180 TJ = 125ºC, VGE = 15V
VCE = 200V
170
550
500
450
160
150 I C = 42A
400
350
140 300
130
I C = 84A
250
120 200
110 150
100 100
10 15 20 25 30 35 40 45 50 55 60 65 70 75
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
170 135
160 t f
td(off) - - - -
150
140
RG = 10Ω , VGE = 15V
VCE = 200V
130
130 125
120 I C = 84A
110
120
100
90
I C = 42A
80
115
70 110
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGP42N30C3.PDF ] | |
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