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PDF IXFP3N50PM Data sheet ( Hoja de datos )
| Número de pieza | IXFP3N50PM | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
PolarHVTM HiPerFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFP 3N50PM
VDSS = 500 V
ID25 = 2.7 A
RDS(on) ≤ 2.0 Ω
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
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Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 50 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
500 V
500 V
± 30 V
± 40 V
2.7 A
8A
3A
10 mJ
100 mJ
10 V/ns
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G DS
Isolated Tab
G = Gate
S = Source
D = Drain
36
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
4g
Features
l Plastic overmolded tab for electrical
isolation
l Fast intrinsic diode
l International standard package
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 1.8 A
Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
±100 nA
TJ = 125° C
5 µA
200 µA
2.0 Ω
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99509E(04/06)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFP3N50PM.PDF ] | |
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