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Número de pieza | IXFH10N80P | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFH10N80P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
TO-220AB (IXFP)
VDSS =
ID25 =
RDS(on) ≤
trr ≤
800V
10A
1.1Ω
250ns
TO-3P (IXFQ)
G
S
D (TAB)
GD S
D (TAB)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062) from Case for 10s
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T Plastic Body for 10sSOLD
Md Mounting Torque (TO-220,TO-247)
Weight
TO-263
TO-220
TO-3P
TO-247
Maximum Ratings
800
800
V
V
±30 V
±40 V
10 A
30 A
5A
600 mJ
10 V/ns
300 W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
5.5
6.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.5 V
±100 nA
25 μA
500 μA
1.1 Ω
© 2009 IXYS CORPORATION, All Rights Reserved
G
D
S
TO-247 (IXFH)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Avalanche Rated
z Low Package Inductance
z Easy to Drive and to Protect
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
DS99432F(08/09)
1 page TO-263 (IXFA) Outline
TO-220 (IXFP) Outline
IXFA10N80P IXFH10N80P
IXFP10N80P IXFQ10N80P
TO-3P (IXFQ) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom
Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
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TO-247 (IXFH) Outline
123
∅P
e
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFH10N80P.PDF ] |
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IXFH10N80P | Power MOSFET ( Transistor ) | IXYS Corporation |
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