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PDF IXFN70N60Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN70N60Q2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM Power
MOSFET Q2-Class
IXFN70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
50/60Hz, RMS
t = 1min
IISOL ≤ 1mA
t = 1s
Mounting Torque
Terminal Connection Torque
Weightwww.DataSheet4U.net
Maximum Ratings
600
600
±30
±40
70
280
70
5
V
V
V
V
A
A
A
J
20
890
-55 ... +150
150
-55 ... +150
300
V/ns
W
°C
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
600
3.0 5.5
±200
50
3
88
V
V
nA
μA
mA
mΩ
VDSS =
ID25 =
≤RDS(on)
trr ≤
600V
70A
88mΩ
250ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z Double Metal Process for Low
Gate Resistance
z miniBLOC, with Aluminium Nitride
Isolation
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Applications
z DC-DC Converters
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Pulse Generators
Advantages
z Easy to Mount
z Space Savings
z High Power Density
© 2009 IXYS Corporation, All Rights Reserved
DS99029D(06/09)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN70N60Q2.PDF ] | |
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