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PDF IXFN38N100Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN38N100Q2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low
High dV/dt, Low trr
Qg,
Low
Intrinsic
Rg
VDSS =
ID25 =
RDS(on)=
1000 V
38 A
0.25 Ω
trr ≤ 300 ns
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EEAARS
dv/dt
PD
TJ
TTsJtMg
VISOLwww.DataSheet4U.net
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TTCC
= 25°C
= 25°C
ITSJ
≤
≤
I1D5M0, °dCi/,dRt ≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
1000
1000
±30
±40
38
152
38
60
5.0
20
V
V
V
V
A
A
A
mJ
J
V/ns
890 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VNGoSt=e
10
1
V,
ID
=
0.5
•
ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
V
2.5 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
50 mA
3 mA
0.25 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99027A(06/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN38N100Q2.PDF ] | |
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