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PDF IXFN32N120P Data sheet ( Hoja de datos )
| Número de pieza | IXFN32N120P | |
| Descripción | Polar HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN32N120P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
TL
TSOLD
VISOL
Md
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Weight
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Maximum Ratings
1200
1200
±30
±40
32
100
16
2
V
V
V
V
A
A
A
J
20
1000
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
300
260
2500
3000
1.5/13
1.3/11.5
30
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
Characteristic Values
Min. Typ. Max.
1200
V
VGS(th)
VDS = VGS, ID = 1mA
3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V
±300 nA
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
50 μA
5 mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
310 mΩ
VDSS =
ID25 =
≤RDS(on)
trr ≤
1200V
32A
310mΩ
300ns
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Isolation Voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on) HDMOSTM Process
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High Voltage Switch-Mode and
Resonant-ModePower Supplies
z High Voltage Pulse Power
Applications
z High Voltage Discharge Circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
z High Voltage DC-DC Converters
z High Voltage DC-AC Inverters
© 2010 IXYS Corporation, All Rights Reserved
DS99718H(03/10)
1 page  
1.000
0.300
0.100
0.010
0.001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
Fig. 13. Maximum Transient Thermal Impedance
IXFN32N120P
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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© 2010 IXYS Corporation, All Rights Reserved
IXYS REF: F_32N120P(99) 3-04-10-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFN32N120P.PDF ] | |
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