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PDF IXFL44N60 Data sheet ( Hoja de datos )
| Número de pieza | IXFL44N60 | |
| Descripción | HiPerFET Power MOSFETs Single Die MOSFET | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFL 44N60
VDSS =
ID25 =
=RDS(on)
600 V
41 A
130 mΩ
trr ≤ 250 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EEAASR
dv/dt
PD
TTJJM
Tstg
TJ
VISOL
Md
www.DataSheet4U.net
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TTCC
= 25°C
= 25°C
TISJ
≤
≤
1ID5M0,°dCi/,dRt ≤G
100 A/µs,
=2Ω
VDD
≤
VDSS,
TC = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
600 V
600 V
±20 V
±30 V
41 A
176 A
44 A
60 mJ
3J
5 V/ns
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
8g
Symbol
VDSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
600
2.5
TJ = 25°C
TJ = 125°C
V
4.5 V
±200 nA
100 µA
2 mA
130 mΩ
ISOPLUS-264TM
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99092(10/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFL44N60.PDF ] | |
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