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PDF IXFL44N100P Data sheet ( Hoja de datos )
| Número de pieza | IXFL44N100P | |
| Descripción | Polar Power MOSFET HiPerFET | |
| Fabricantes | IXYS Corporation | |
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PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL44N100P
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
Maximum lead temperature for soldering
Plastic body for 10s
VISOL
50/60 Hz, RMS, 1 minute
IISOL ≤ 1mA
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FC Mounting force
t = 1s
Weight
Maximum Ratings
1000
1000
± 30
± 40
22
110
22
2
V
V
V
V
A
A
A
J
15
357
-55 ... +150
150
-55 ... +150
300
260
2500
3000
40..120/4.5..27
V/ns
W
°C
°C
°C
°C
°C
V~
V~
N/lb.
8g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 22A, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 200 nA
50 μA
3 mA
240 mΩ
VDSS =
ID25 =
≤RDS(on)
trr ≤
1000V
22A
240mΩ
300ns
ISOPLUS i5-PakTM (HV)
G
S
D
G = Gate
S = Source
D = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• Switched-mode and resonant-mode
power supplies
• DC-DC converters
• Laser Drivers
• AC and DC motor controls
• Robotics and servo controls
Advantages
• Easy assembly
• Space savings
• High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99893A(4/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFL44N100P.PDF ] | |
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