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PDF IXFL100N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFL100N50P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM HiPerFET
Power MOSFET
ISOPLUS264TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL 100N50P
VDSS = 500 V
ID25 = 70 A
≤RDS(on) 52 mΩ
trr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings ISOPLUS264
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
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VISOL
FC
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 2 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
500
500
±30
±40
70
250
100
100
5
20
625
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS
IISOL ≤1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
5
V
V
VG
D
VS
ISOLATEDTAB
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
N/lb
g
G = Gate
S = Source
D = Drain
Features
l International standard isolated
package
l UL recognized package
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic diode
Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
500 V
l Easy to mount
l Space savings
l High power density
3.0 5.0 V
±200 nA
TJ = 125° C
25 µA
2000 µA
52 m Ω
© 2006 IXYS All rights reserved
DS99563E(01/06)
1 page  
1.000
0.100
0.010
0.001
0.0001
IXFL 100N50P
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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© 2006 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFL100N50P.PDF ] | |
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