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PDF IXFL34N100 Data sheet ( Hoja de datos )
| Número de pieza | IXFL34N100 | |
| Descripción | HiPerFET Power MOSFET ISOPLUS264 | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power
MOSFET
ISOPLUS264TM
IXFL34N100
(Electrically Isolated Tab)
Single-Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbol
Test Conditions
VVDDGSSR
TTJJ
= 25°C to 150°C
= 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
IIDDM25
TTCC
= 25°C
= 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
PD TC = 25°C
TJ
TTJsMtg
TL
TSOLD
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
F Mounting ForceC www.DataSheet4U.net
VISOL
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Weight
Maximum Ratings
1000
1000
V
V
± 20 V
± 30 V
30 A
136 A
34 A
4J
5 V/ns
550
-55 ... +150
150
-55 ... +150
300
260
40..120 / 9..27
2500
3000
8
W
°C
°C
°C
°C
°C
N/lb.
V~
V~
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0 V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20 V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 17A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
3.0
V
5.5 V
± 100 nA
100 μA
2 mA
280 mΩ
VDSS =
ID25
RDS(on)
=
≤
1000V
30A
280mΩ
ISOPLUS264
G
D
S
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
z Low Drain to Tab Capacitance(<30pF)
z Low RDS (on) HDMOSTM Process
z Rugged Polysilicon Gate Cell Structure
z Avalanche Rated
z Fast intrinsic Rectifier
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications:
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z DC Choppers
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS98932D(7/09)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFL34N100.PDF ] | |
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