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PDF CMSSH-3CE Data sheet ( Hoja de datos )
| Número de pieza | CMSSH-3CE | |
| Descripción | ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES | |
| Fabricantes | Central Semiconductor | |
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CMSSH-3E CMSSH-3CE
CMSSH-3AE CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
FEATURED ENHANCED SPECIFICATIONS:
♦ IF from 100mA max to 200mA MAX
♦ BVR from 30V min to 40V MIN
♦ VF from 1.0V max to 0.8V MAX
CMSSH-3E: SINGLE
CMSSH-3AE: DUAL, COMMON ANODE
CMSSH-3CE: DUAL, COMMON CATHODE
CMSSH-3SE: DUAL, IN SERIES
MARKING CODE: 31E
MARKING CODE: 3AE
MARKING CODE: 3CE
MARKING CODE: 3SE
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
ΘJA
40
200
350
750
250
-65 to +150
500
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP MAX
IR VR=25V
IR
♦BVR
VR=25V, TA=100°C
IR=100µA
VF
♦VF
♦VF
♦♦VF
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
CT VR=1.0V, f=1.0MHz
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification
♦♦ Additional Enhanced specification
40
90 500
25 100
50
0.29 0.33
0.37 0.42
0.61 0.80
0.65 1.0
7.0
5.0
UNITS
nA
μA
V
V
V
V
V
pF
ns
www.DataSheet4U.com
R2 (9-February 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMSSH-3CE.PDF ] | |
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