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PDF CMLT5088EM Data sheet ( Hoja de datos )
| Número de pieza | CMLT5088EM | |
| Descripción | SURFACE MOUNT DUAL MATCHED NPN SILICON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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CMLT5088EM
SURFACE MOUNT
DUAL, MATCHED
NPN SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5088EM
consists of two individual, isolated 5088E NPN silicon
transistors with matched VBE(ON) characteristics.
This device is designed for applications requiring high
gain and low noise.
MARKING CODE: 88M
SOT-563 CASE
• Device is Halogen Free by design
FEATURES:
• Transistor pair matched for VBE(ON)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
50
50
5.0
100
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCB=20V
VEB=3.0V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=10kΩ
f=10Hz to 15.7kHz
50
50
5.0
300
300
300
50
100
350
50
50
135
65
8.7
45 100
110 400
700 800
430 900
435
430
125
4.0
15
1400
3.0
UNITS
nA
nA
V
V
V
mV
mV
mV
MHz
pF
pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
VCE=5.0V, IC=1.0μA
VCE=5.0V, IC=5.0μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
MIN
MAX
UNITS
10 mV
10 mV
10 mV
10 mV
R1 (20-January 2010)
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