(PDF) AP1333GU Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP1333GU
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP1333GU Pb Free Plating Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive ▼ Small Package Outline ▼ Fast Switching Speed ▼ RoHS Compliant Description D SOT-323 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S BVDSS RDS(ON) ID -20V 800mΩ -550mA D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 www.DataSheet4U.com Rating -20 ±12 -550 -440 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/℃ ℃ ℃ Max. Value 360 Unit ℃/W Data and specifications subject to change without notice 200822051-1/4 1 page

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PDF AP1333GU Data sheet ( Hoja de datos )