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PDF PSTG25HTT12 Data sheet ( Hoja de datos )
| Número de pieza | PSTG25HTT12 | |
| Descripción | Powerline N-Channel Trench Gate-IGBT Triple Module | |
| Fabricantes | Powersem GmbH | |
| Logotipo |  |
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Powerline N-Channel
Trench Gate-
IGBT Triple Module
Preliminary Data Sheet
ECO-PACTM 1
PSTG 25HTT12
VCES
VCE(sat)
IC25
IC75
ICM
tSC
= 1200 V
= 1.9 V
= 35 A
= 25 A
= 75 A
= 10 µs
Symbol
VCES
VGES
IC25
IC75
ICM
Ptot
tSC
TVJ
Tstg
RthJC
RthJC
VISOL
MD
Test Conditions
TVJ = 25°C to 150°C
continous
TC = 25°C;
TC = 75°C;
TC = 75°C;
TC = 75°C
VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V
TVJ = 125°C, non-repetitive
IGBT-per devices
Diode-per devices
IISOL ≤ 1 mA, 50/60 Hz, t= 1 min.
180° sine
Mounting torque (M4)
dS
dA
Weight
Creepage distance on surface
Strike distance through air
typ.
www.DataSheet4U.com
Maximum Ratings
1200
V
±20 V
35 A
25 A
75 A
45 W
10
-40...+150
-40...+125
1.65
4.0
3000
1.5-1.8
typ. min.
11.2
4.0
18
µs
°C
°C
K/W
K/W
V~
Nm
mm
mm
g
Features
• Package with DCB ceramic base
plate and soldering pins for PCB
mounting
• Isolation voltage over 3000 V∼
• Trench Gate
• Enhancement Mode N-Channel
Device
• Non Punch through Structure
• High Switching Speed
• Low On-state Saturation Voltage
• High Input Impedance Simplifies
Gate Drive
• Latch-Free Operation
• Fully Short Circuit Rated to 10 µs
• Wide RBSOA
Applications
• High Frequency Inverters
• Motor Control
• Switch Mode Power Supplies
• High Frequency Welding
• UPS Systems
• PWM Drives
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling
precautions.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PSTG25HTT12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PSTG25HTT12 | Powerline N-Channel Trench Gate-IGBT Triple Module | Powersem GmbH |
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