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PDF AWT6307R Data sheet ( Hoja de datos )
| Número de pieza | AWT6307R | |
| Descripción | LINEAR POWER AMPLIFIER MODULE | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency:
21 % @ +16 dBm output
40 % @ +28 dBm output
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 Ω System
• Low Profile Surface Mount Package: 1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and
pHEMT devices on the same die, to enable state-
of-the-art reliability, temperature stability, and
ruggedness. The AWT6307R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
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levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity
in a 50 Ω system.
AWT6307R
HELPTM Cellular CDMA 3.4 V/28 dBm
Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
AWT6307R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
VEN 1
VMODE 2
GND at slug (pad)
8 GND
Bias Control
7 RFOUT
RFIN 3
6 GND
VBATT 4
5 VCC
Figure 1: Block Diagram
03/2006
1 page  
AWT6307R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying a logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
Table 5: Bias Control
POUT
LEVELS
BIAS
MODE
VEN
<+16 dBm Low +2.4 V
>+16 dBm High +2.4 V
- Shutdown 0 V
VMODE
+2.4 V
0V
0V
VENABLE
RFIN
VMODE
VBATT
C6
1 µF
C7
68 pF*
1 VENABLE
2 VMODE
3 RFIN
4 VBATT
C1
10 µF
C4
68 pF
GND 8
RFOUT 7
GND 6
VCC 5
GND
at slug
C5
68 pF
RFOUT
C2
10 µF
VCC
Note:
* This capacitor is only needed if a DC voltage is present on the RF input pin
www.DataSheet4U.com
Figure 3: Application Circuit
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AWT6307R.PDF ] | |
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