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Número de pieza | APTC60HM24T3G | |
Descripción | Full bridge Super Junction MOSFET Power Module | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTC60HM24T3G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTC60HM24T3G
Full bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
www.DataPSDheet4UM.caoxmimum Power Dissipation
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
1000000
100000
10000
Coss
Ciss
1000
100
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
www.DataSheet4U.com
APTC60HM24T3G
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 95A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10 Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=95A
10 TJ=25°C
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
www.microsemi.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTC60HM24T3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTC60HM24T3G | Full bridge Super Junction MOSFET Power Module | Microsemi |
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