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PDF DMP2004WK Data sheet ( Hoja de datos )
| Número de pieza | DMP2004WK | |
| Descripción | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DMP2004WK (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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DMP2004WK
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• Very Low Gate Threshold Voltage VGS(th) < 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
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SOT-323
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
ESD PROTECTED
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Characteristic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
GS
TOP VIEW
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±8
-400
-1.4
Units
V
V
mA
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
250
500
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯⎯ V
⎯ -1.0 μA
⎯ ±1.0 μA
VGS(th)
-0.5
⎯
-1.0
0.7 0.9
RDS (ON)
⎯
1.1 1.4
1.7 2.0
V
Ω
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
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Output Capacitance
Reverse Transfer Capacitance
|Yfs| 200
⎯
⎯ mS
VSD -0.5
⎯ -1.2
V
Ciss
Coss
Crss
⎯
⎯
⎯
⎯ 175 pF
⎯ 30 pF
⎯ 20 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = -250mA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = -0.2A
VGS = 0V, IS = -115mA
VDS = -16V, VGS = 0V
f = 1.0MHz
DMP2004WK
Document number: DS30931 Rev. 4 - 2
1 of 4
www.diodes.com
December 2007
© Diodes Incorporated
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