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PDF BSS84V Data sheet ( Hoja de datos )
| Número de pieza | BSS84V | |
| Descripción | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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BSS84V
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
Mechanical Data
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•
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SOT-563
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
D2 G1
S1
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
S2 G2
D1
TOP VIEW
Internal Schematic
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
-50
±20
-130
Units
V
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
www.DRaetvaeSrsheeeTtr4aUns.fceormCapacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
-50 -75 ⎯ V VGS = 0V, ID = -250μA
⎯ ⎯ -15 µA VDS = -50V, VGS = 0V, TJ = 25°C
⎯
⎯
⎯
⎯
-60
-100
µA
nA
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
⎯ ⎯ ±50 nA VGS = ±20V, VDS = 0V
VGS(th) -0.8 -1.6 -2.0
RDS (ON) ⎯ 2 10
gFS 0.05 ⎯ ⎯
V VDS = VGS, ID = -1mA
Ω VGS = -5V, ID = -0.100A
S VDS = -25V, ID = -0.1A
Ciss
Coss
Crss
⎯ ⎯ 45 pF
⎯ ⎯ 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
⎯ ⎯ 12 pF
tD(ON)
tD(OFF)
⎯
⎯
10 ⎯ ns VDD = -30V, ID = -0.27A,
18 ⎯ ns RGEN = 50Ω, VGS = -10V
Notes:
1. RGS ≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
BSS84V
Document number: DS30605 Rev. 8 - 2
1 of 3
www.diodes.com
October 2007
© Diodes Incorporated
1 page | ||
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| PDF Descargar | [ Datasheet BSS84V.PDF ] | |
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