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PDF BSS84 Data sheet ( Hoja de datos )
| Número de pieza | BSS84 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 1995 7
PARTMARKING DETAIL SP
BSS84
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Gate-Source Voltage Peak
VGS
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-50
-130
-520
±20
360
-55 to +150
V
mA
mA
V
mW
°C
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-50
V VGS=0V, ID=0.25mA
Gate-Source
Threashold Voltage
VGS(th)
-0.8 -1.5 -2.0 V
VDS=VGS , ID=-1mA
Zero gate Voltage
Drain Current
IDSS
-1 -15 µA
-2 -60 µA
Gate-Source Leakage
Current
Drain Source On-State
Resistance (1)
Forward
Transconductance (1)
(2)
IGSS
RDS(on)
gfs
-100
-1 -10 nA
6 10 Ω
0.05 0.07
S
Tj=25 °C
Tj=125 °C
VDS=-50V, VGS=0V(2)
Tj=25 °C
VDS=-25V, VGS=0V
VGS = ±20V
VDS=0V
VGS=-5V
ID=-100mA
VDS=-25V
ID=-100mA
Input Capacitance (2)
Output Capacitance
Reverse Transfer
Capacitance (2)
Turn-On Time ton
Turn-Off Time toff
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
40
15
6
10
10
18
25
VGS=0V
VDS=-25V
pF f=1MHz
VDD=-30V
ID=-0.27A
ns VGS=-10V
RGS=50Ω
* (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
(2) Sample test.
3 - 69
1 page | ||
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| PDF Descargar | [ Datasheet BSS84.PDF ] | |
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