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Número de pieza | NTMD4184PF | |
Descripción | Power MOSFET and Schottky Diode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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Power MOSFET and
Schottky Diode
-30 V, -4.0 A, Single P-Channel with 20 V,
2.2ĂA, Schottky Barrier Diode
Features
•ăFETKYt Surface Mount Package Saves Board Space
•ăIndependent Pin-Out for MOSFET and Schottky Allowing for
Design Flexibility
•ăLow RDS(on) MOSFET and Low VF Schottky to Minimize
Conduction Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThis is a Pb-Free Device
Applications
•ăDisk Drives
•ăDC-DC Converters
•ăPrinters
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJA t < 10 s
(Note 1)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
-30
±20
-3.3
-2.6
1.6
-2.3
-1.8
0.77
-4.0
-3.2
V
V
A
W
A
W
A
Power Dissipation
RqJA t < 10 s (Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
PD
IDM
TJ, TSTG
2.31
-10
-55 to
+150
W
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS -1.3 A
TL 260 °C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Peak Repetitive Reverse Voltage
VRRM 20 V
DC Blocking Voltage
VR 20 V
Average Rectified Forward
Current, (Note 1)
Steady IF 2.2 A
State
t < 10 s
3.2
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
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http://onsemi.com
P-CHANNEL MOSFET
V(BR)DSS
-30 V
RDS(on) Max
95 mW @ -10 V
165 mW @ -4.5 V
ID Max
-4.0 A
VR Max
20 V
SCHOTTKY DIODE
VF Max
0.58 V
IF Max
2.2 A
SA
G
D
P-Channel MOSFET
C
Schottky Diode
MARKING DIAGRAM
& PIN ASSIGNMENT
8
1
SOIC-8
CASE 751
STYLE 18
C CDD
8
4184PF
AYWW
G
1
A ASG
4184PF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTMD4184PFR2G SOIC-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD4184PF/D
1 page 1000
100 0.5
0.2
0.1
10 0.05
0.02
0.01
1
NTMD4184PF
TYPICAL CHARACTERISTICS
0.1
Single Pulse
0.01
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 11. Thermal Response - RqJA at Steady State (min pad)
10
100
0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.001
0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 12. Thermal Response - RqJA at Steady State (1 inch sq pad)
100 100
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100 1000
100 1000
10
TJ = 85°C
1
TJ = 125°C
TJ = 25°C
10
TJ = 125°C
TJ = 85°C
1
TJ = 25°C
TJ = -55°C
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 13. Typical Forward Voltage
1.5
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 14. Maximum Forward Voltage
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Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NTMD4184PF.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTMD4184PF | Power MOSFET and Schottky Diode | ON Semiconductor |
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