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Número de pieza | NTMS4706N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N−Channel, SO−8
Features
• Low RDS(on)
• Low Gate Charge
• Standard SO−8 Single Package
• Pb−Free Package is Available
Applications
• Notebooks, Graphics Cards
• Synchronous Rectification
• High Side Switch
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t v 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
8.6
6.2
10.3
1.5
t v 10 s
2.2
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
6.4
4.6
0.83
Pulsed Drain Current
tp = 10 ms
IDM 31
Operating Junction and Storage Temperature
TJ, −55 to
Tstg 150
Source Current (Body Diode)
IS 2.1
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A,
L = 10 mH, RG = 25 W)
EAS
150
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260
Unit
V
V
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
83.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
58
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
RDS(ON) TYP
30 V
9.0 mW @ 10 V
11.4 mW @ 4.5 V
ID MAX
(Note 1)
10.3 A
N−Channel
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1
SO−8
CASE 751
STYLE 12
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4706NR2
SO−8 2500/Tape & Reel
NTMS4706NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 3
1
Publication Order Number:
NTMS4706N/D
1 page NTMS4706N
PACKAGE DIMENSIONS
SOIC−8
CASE 751−07
ISSUE AG
−X−
A
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
J
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERwANwCIwNG.DPEaRtaSheet4U.com
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
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