PDF APT20GN60SDQ1 Data sheet ( Hoja de datos )

Número de pieza	APT20GN60SDQ1
Descripción	High Speed PT IGBT
Fabricantes	Microsemi Corporation
Logotipo
Hay una vista previa y un enlace de descarga de APT20GN60SDQ1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! TYPICAL PERFORMANCE CURVES APT20GN60BDQ1 APTA2P0GTN2600GBND_6S0DSQD1Q(G1) APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefﬁcient. Low gate charge simpliﬁes gate drive design and minimizes losses. • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • 6µs Short Circuit Capability • 175°C Rated (B) TO-247 G C E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS D3PAK (S) C GE C G E MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise speciﬁed. APT20GN60BD_SDQ1(G) UNIT VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 600 ±30 40 24 60 60A @ 600V 136 -55 to 175 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX V(BR)CES VGE(TH) VCE(ON) I CES I GES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor 600 5.0 5.8 6.5 1.1 1.5 1.9 1.7 50 TBD 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Units Volts µA nA Ω www.DataSheet.in Microsemi Website - http://www.microsemi.com 1 page TYPICAL PERFORMANCE CURVES 2,000 1,000 Cies 500 100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage APT20GN60BD_SDQ1(G) 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 1.20 1.00 D = 0.9 0.80 0.7 0.60 0.40 0.20 0 10-5 0.5 Note: 0.3 0.1 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 140 100 50 Fmax = min (fmax, f max2) 0.05 fmax1 = t d(on) + tr + td(off) + tf TJ = 125°C TC = 75°C 10 D = 50 % VCE = 400V 7 RG = 4.3Ω 5 10 15 20 25 fmax2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current www.DataSheet.in 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet APT20GN60SDQ1.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
APT20GN60SDQ1	High Speed PT IGBT	Microsemi Corporation
APT20GN60SDQ1G	High Speed PT IGBT	Microsemi Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar