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PDF HFA120FA60P Data sheet ( Hoja de datos )
| Número de pieza | HFA120FA60P | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay Siliconix | |
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HFA120FA60P
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
SOT-227
K2 A2
K1 A1
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed for industrial level
RoHS
COMPLIANT
PRODUCT SUMMARY
VR
VF (typical) at 125 °C
Qrr (typical)
IRRM (typical)
trr (typical)
dI(rec)M/dt (typical) at 125 °C
IF(DC) at TC
600 V
1.4 V
270 nC
7.0 A
65 ns
270 A/µs
40 A at 100 °C
DESCRIPTION
This SOT-227 modules with HEXFRED® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base plate,
allowing for common heatsinks and compact assemblies to
be built. These modules are intended for general
applications such as power supplies, battery chargers,
electronic welders, motor control, DC chopper, and inverters.
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current
Maximum repetitive forward current
RMS isolation voltage, any terminal to case
IFSM
IFRM
VISOL
Maximum power dissipation
PD
Operating junction and storage temperature range TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
t = 1 minute
TC = 25 °C
TC = 100 °C
VALUES
600
75
40
TBD
180
2500
180
71
- 55 to 150
UNITS
V
A
V
W
°C
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
VBR
IR = 100 µA
600 -
IF = 60 A
- 1.5
Maximum forward voltage
VFM IF = 120 A
See fig. 1
-
1.9
Maximum reverse leakage current
IF = 60 A, TJ = 125 °C
-
VR = VR rated
-
IRM See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
1.4
2.5
130
Junction capacitance
CT VR = 200 V
See fig. 3
-
120
MAX.
-
1.7
2.1
1.6
20
2000
170
UNITS
V
µA
pF
Document Number: 94049
Revision: 04-Aug-08
www.DataSheet.in
For technical questions, contact: [email protected]
www.vishay.com
1
1 page  
HEXFRED®
Ultrafast Soft Recovery
Diode, 60 A
VR = 200 V
HFA120FA60P
Vishay High Power Products
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
D.U.T.
Current
monitor
L = 100 µH
Rg = 25 Ω
High-speed
switch
Freewheel
Diode
+
Vd = 50 V
IL(PK)
V(AVAL)
VR(RATED)
Decay
time
Fig. 11 - Avalanche Test Circuit and Waveforms
Document Number: 94049
Revision: 04-Aug-08
www.DataSheet.in
For technical questions, contact: [email protected]
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HFA120FA60P.PDF ] | |
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