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PDF HFA120EA60 Data sheet ( Hoja de datos )
| Número de pieza | HFA120EA60 | |
| Descripción | Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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HEXFREDTM
VR = 600V
VF(typ.)* = 1.4V
IF(AV) = 60A
Qrr (typ.) = 270nC
IRRM(typ.) = 7.0A
trr(typ.) = 65ns
di(rec)M/dt (typ.)* = 270A/µs
PD -2.531
HFA120FA60, HFA120EA60
Ultrafast, Soft Recovery Diode
K2 A2
A2 K1
K1 A1
HFA120FA60
K2 A1
HFA120EA60
Features
• Fast Recovery time characteristic
• Eletrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
Description
This SOT-227 modules with FRED rectifier are available in two basic
configurations. They are the antiparallel and the parallel configurations.
The antiparallel configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel configuration
(HFA120FA60) is used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from the copper
base plate, allowing for common heatsinks and compact assemblies to be
built.
These modules are intended for general applications such as power
supplies, battery chargers, electronic welders, motor control, DC chopper,
and inverters.
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IFRM
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
*125 °C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
S O T -22 7
Max.
600
75
40
TBD
180
2500
180
71
-55 to +150
Units
V
A
V
W
°C
www.DataSheet.in
10/09/97
1 page  
HFA120FA60, HFA120EA60
RE VERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0 .0 1 Ω
D .U.T.
d if /d t
A DJUST G
D
IR FP 2 5 0
S
IF
0
3
t rr
ta
tb
2
IRRM
Q rr 4
0.5 I RRM
di(re c)M/dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
M ON IT OR
L = 100µ H
Rg = 25 ohm
HIGH -S PE ED
SW IT CH
FR EE -W HE EL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(R AT ED)
DE CAY
TIM E
Fig. 11 - Avalanche Test Circuit and Waveforms
www.DataSheet.in
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA120EA60.PDF ] | |
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