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PDF HFA120FA120P Data sheet ( Hoja de datos )
| Número de pieza | HFA120FA120P | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay Siliconix | |
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HFA120FA120P
Vishay High Power Products
SOT-227
HEXFRED®
Ultrafast Soft Recovery Diode, 120 A
14
23
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC
1200 V
2.8 V
145 ns
60 A at 62 °C
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA120FA120P) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
Single pulse forward current
IF
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 62 °C
TJ = 25 °C
Rated VR, square wave, 20 kHz, TC = 60 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
60
350
130
337
135
2500
- 55 to + 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 µA
1200
IF = 60 A
-
Forward voltage
VFM IF = 120 A
-
IF = 60 A, TJ = 125 °C
-
Reverse leakage current
VR = VR rated
IRM
TJ = 150 °C, VR = VR rated
-
-
TYP.
-
2.8
3.6
2.7
2.0
2.7
MAX.
-
4.0
5.3
-
75
10
UNITS
V
µA
mA
Document Number: 94608
Revision: 16-Oct-08
www.DataSheet.in
For technical questions, contact: [email protected]
www.vishay.com
1
1 page  
HEXFRED®
Ultrafast Soft Recovery
Diode, 120 A
HFA120FA120P
Vishay High Power Products
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94608
Revision: 16-Oct-08
www.DataSheet.in
For technical questions, contact: [email protected]
www.vishay.com
5
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| PDF Descargar | [ Datasheet HFA120FA120P.PDF ] | |
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