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PDF KTC3535T Data sheet ( Hoja de datos )
| Número de pieza | KTC3535T | |
| Descripción | RELAY DRIVERS/ LAMP DRIVERS/ MOTOR DRIVERS AND STROBES APPLICATION | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
ᴌAdoption of MBIT Processes.
ᴌLarge Current Capacitance.
ᴌLow Collector-to-Emitter Saturation Voltage.
ᴌHigh Speed Switching.
ᴌUltrasmall Package facilitates miniaturization in end products.
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTA1544T.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC *
Tj
30
30
6
2
4
400
0.9
150
Storage Temperature Range
Tstg -55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
A
mA
W
ᴱ
ᴱ
KTC3544T
EPITAXIAL PLANAR NPN TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
H NType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
TEST CONDITION
VCB=20V, IE=0
VEB=3V, IC=0
IC=10ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
VCE=2V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
MIN.
-
-
30
30
6
-
-
200
-
-
TYP.
-
-
-
-
-
180
0.85
-
150
19
MAX.
0.1
0.1
-
-
-
400
1.2
560
-
-
UNIT
ỌA
ỌA
V
V
V
mV
V
MHz
pF
Swiitching
Time
Turn-On Time
Storage Time
Fall Time
ton
PW=20µs
DC <= 1%
IB1
IB2
INPUT
RB
tstg 50Ω VR
OUTPUT
24Ω
-
-
100µF
470µF
tf
VBE =-5V
VCC =12V
-
20IB1=-20IB2=IC =500mA
60
500
25
-
-
-
nS
2001. 11. 7
Revision No : 0
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTC3535T.PDF ] | |
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