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PDF HMC-APH510 Data sheet ( Hoja de datos )
| Número de pieza | HMC-APH510 | |
| Descripción | GaAs HEMT MMIC POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v03.0709
HMC-APH510
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 - 40 GHz
Typical Applications
This HMC-APH510 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• Military & Space
Features
Output IP3: +35 dBm
P1dB: +26 dBm
Gain: 20 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.76 x 0.92 x 0.1 mm
Functional Diagram
General Description
The HMC-APH510 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 37 and 40 GHz. The HMC-
APH510 provides 20 dB of gain, and an output power
of +26 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH510 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications, TA = +25° C,
Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA [2]
Parameter
Min.
Typ.
Frequency Range
37 - 40
Gain
18 20
Input Return Loss
16
Output Return Loss
7
Output power for 1dB Compression (P1dB)
25 26
Output Third Order Intercept (IP3)
33 35
Supply Current (Idd1+Idd2+Idd3)
640
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Iddtotal = 640 mA
Max.
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 196
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v03.0709
Assembly Diagram
3
HMC-APH510
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 - 40 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
3 - 200
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-APH510.PDF ] | |
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