(PDF) SIDC81D120H6 Datasheet - Fast switching diode chip

Número de pieza	SIDC81D120H6
Descripción	Fast switching diode chip
Fabricantes	Infineon Technologies
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No Preview Available ! Preliminary www.DataSheet4U.com SIDC81D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • EUPEC power modules and discrete devices Applications: • SMPS, resonant applications, drives A C Chip Type SIDC81D120H6 VR IF Die Size 1200V 150A 9 x 9 mm2 Package Ordering Code sawn on foil Q67050-A4101- A102 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9x9 81 / 69.39 mm2 8.28 x 8.28 120 µm 150 mm 180 deg 169 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4202S, Edition 1, 8.01.2002 1 page

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