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PDF IXFN73N30 Data sheet ( Hoja de datos )
| Número de pieza | IXFN73N30 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 73 N 30
IXFN 73 N 30
VDSS
ID25
300 V 73 A
300 V 73 A
trr ≤ 200 ns
RDS(on)
45 mΩ
45 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
E
AR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
M
d
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
300 300
300 300
±20 ±20
±30 ±30
73 73
292 292
40 40
30 30
55
V
V
V
V
A
A
A
mJ
V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
300
2
V
4V
±200 nA
400 uA
2 mA
45 mΩ
TO-264 AA (IXFK)
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l Internationalstandardpackages
l JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
l miniBLOC with Aluminium nitride
isolation
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
l FastintrinsicRectifier
Applications
l DC-DC converters
l Synchronousrectification
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l Temperature and lighting controls
l Low voltage relays
Advantages
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
92805J (11/01)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN73N30.PDF ] | |
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