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PDF K3659 Data sheet ( Hoja de datos )
| Número de pieza | K3659 | |
| Descripción | MOSFET ( Transistor ) - 2SK3659 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3659
Isolated TO-220
FEATURES
•4.5V drive available.
•Low on-state resistance,
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
•Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
•Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V)
Gate to source voltage (VDS = 0 V)
VDSS
VGSS
20
±20
Drain current (DC) (TC = 25°C)
Drain current (pulse) Note1
ID(DC)
ID(pulse)
±65
±260
Total power dissipation (TA = 25°C)
PT1
2.0
Total power dissipation (TC = 25°C)
PT2
25
Channel temperature
Tch 150
Storage temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 35
EAS 122
V
V
A
A
W
W
°C
°C
A
mJ
Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
©
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 40 A
12 Pulsed
10
VGS = 4.5 V
8
10 V
6
4
2
0
-50 0 50 100 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 10 V
VGS = 10 V
RG = 10 Ω
td(off)
tf
td(on)
tr
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10000
1000
100
2SK3659
www.DataSheet4U.com
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
f = 1 MHz
Ciss
Coss
Crss
10
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20 10
16 VDD = 16 V
10 V
12
VGS
8
8
6
4
42
VDS
ID = 65 A
00
0 5 10 15 20 25 30 35
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
100
VGS = 10 V
0V
10
100
1
0.1
0.01
0
Pulsed
0.5 1
VSD - Source to Drain Voltage - V
1.5
10
1
0.1
Data Sheet D16251EJ2V0DS
VGS = 0 V
di/dt = 100 A/µs
1 10
ID - Drain Current - A
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3659.PDF ] | |
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