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PDF BYM26BGP Data sheet ( Hoja de datos )
| Número de pieza | BYM26BGP | |
| Descripción | SINTERED GLASS JUNCTIONFAST SWITCHING PLASTIC RECTIFIER | |
| Fabricantes | Gulf Semiconductor | |
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BYM26AGP THRU BYM26EGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE：200V to 1000V
CURRENT: 2.3A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Low leakage current Typical Ir<0.1µA
Excellent stability
Guaranteed avalanche energy absorption capability
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DO-201AD
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
Current 10mm lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 25°C
non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage
Ta =125°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
SYMBOL
Vrrm
Vrms
Vdc
V(BR)R (min)
BYM26
AGP
200
140
200
300
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
Rθja
Tstg, Tj
BYM26
BGP
400
280
400
500
BYM26
CGP
600
420
600
700
BYM26
DGP
800
560
800
900
BYM26
EGP
1000
700
1000
1100
2.3
45
2.65
10
10.0
150.0
30
75.0
20.0
-65 to +175
75
Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
units
V
V
V
V
A
A
V
mJ
µA
µA
nS
pF
°C /W
°C
Rev.A1
www.gulfsemi.com
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